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HL: Fachverband Halbleiterphysik

HL 20: Poster IA (Ultrafast phenomena; Optical properties; Transport; Theory)

HL 20.16: Poster

Montag, 16. März 2015, 15:00–20:00, Poster B

Time-resolved photoluminescence spectroscopy on silicon doped AlN, iron doped GaN and nominally undoped ZnO using correlational analysis — •Matthias Lamprecht¹, Benjamin Neuschl¹, Sebastian Bauer¹, Ramón Collazo², Martin Klein³, Ferdinand Scholz³, Zlatko Sitar², and Klaus Thonke¹ — ¹Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany — ²Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA — ³Optoelectronics Department, University of Ulm, 89069 Ulm, Germany

We present results of time-resolved photoluminescence investigations using correlational analysis on a time scale of microseconds and milliseconds. Modulation of the pumping HeCd laser with a pseudorandom binary sequence yields correlational properties similar to white noise. Via cross correlation of the detected signal and the pseudorandom binary sequence the photoluminescence decay is computed. We applied this method to several defect-related photoluminescence bands in silicon doped AlN, iron doped GaN and nominally undoped ZnO and discuss the characteristics, and temperature dependencies.