Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)
HL 21.10: Poster
Monday, March 16, 2015, 15:00–20:00, Poster B
Lattice dynamics of β-Ga2O3 mono-crystals — •Marcel Weinhold, Thomas Sander, and Peter Jens Klar — Justus-Liebig-University Giessen, Institute of Experimental Physics I, Heinrich-Buff-Ring 16, 35392 Giessen
Ga2O3 has attracted great interest, due to its potential use in UV transparent electrodes, photodetectors, and field-effect transistors (FETs). On top of that, Ga2O3 offers the opportunity to grow single crystalline substrates. In spite of that, the knowledge about its lattice vibration modes is still limited. We performed Raman studies of monoclinic Ga2O3 single crystals and performed a corresponding group theoretical analysis of the Raman activity of the vibrational modes. These results are compared with the Raman spectra obtained at room temperature of (201) and (010) oriented β-Ga2O3 grown by the edge-defined film-fed growth method (EFG). To identify the symmetry characteristics of the phonons, the samples were rotated about the axis defined by the excitation laser light coming in at normal incidence. Furthermore, the dependence of the Raman spectra on excitation wavelength in the UV to IR range will be presented.