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HL: Fachverband Halbleiterphysik
HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)
HL 21.13: Poster
Montag, 16. März 2015, 15:00–20:00, Poster B
Influence of the preparation of thin indium oxide films on the electronic surface properties — •Theresa Berthold1, Jochen Räthel1, Stefan Krischok1, Marcel Himmerlich1, Chunyu Wang2, Volker Cimalla2, Julius Rombach3, Marko Perestjuk3, and Oliver Bierwagen3 — 1Institut für Physik and Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, Germany — 2Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, Germany — 3Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
The electronic structure of In2O3 can be modified by an oxygen plasma surface treatment, to establish a surface depletion layer [1]. We analyze the influence of different preparation methods, like annealing in vacuum and oxygen environment, oxygen plasma modification as well as indium-flash-off, on In2O3 surface composition and electronic properties, such as band bending, electron accumulation and work function. Thin indium oxide films grown by MBE or MOCVD are characterized using PES and the morphology is analyzed by AFM. In the initial state, an electron accumulation layer as well as hydrocarbon and hydroxide adsorbates are observed at the surface. Thermal treatments result in adsorbate removal, while the formation of surface defects can be prevented by annealing in oxygen environment. Oxygen plasma processes as well as other oxidative surface treatments induce a change in the surface composition. In all cases, the electronic surface properties are influenced and changes in band bending and work function are observed. [1] O. Bierwagen et al., Appl. Phys. Lett. 98, 172101 (2011)