Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.14: Poster

Monday, March 16, 2015, 15:00–20:00, Poster B

Conducting mechanism in epitaxial p-type Transparent Conducting Oxide Cr₂O₃:Mg — •Leo Farrell, Karsten Fleischer, David Caffrey, Darragh Mullarkey, Emma Norton, Elisabetta Arca, and Igor Shvets — CRANN, School of Physics, Trinity College Dublin, College Green, Dublin 2, Ireland

p-type transparent conducting oxides (TCOs) are an important material class for many optoelectronic devices. However, p-type TCOs have always exhibited poorer performances than their n-type counterparts. As a result, new p-type materials remain an important area of research. Cr₂O₃ doped with Mg is a candidate p-type TCO material. In this study we improved on the electrical and optical properties of Cr₂O₃:Mg. The samples were epitaxially grown by MBE where the stoichiometry was finely tuned in order to investigate the effect on the structural, electrical and optical properties. The influence of the Mg dopants and the oxygen partial pressure were also investigated by Seebeck and resistivity measurements. Carrier transport properties are examined. The role of polaronic reduction in hole mobility for this material is also discussed. Investigating the fundamental properties in epitaxial material will allow us to add to our understanding of the role of defects in p-type TCOs, helping to improve material grown by other more industrial relevant methods.