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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.16: Poster

Montag, 16. März 2015, 15:00–20:00, Poster B

Impact of soft x-rays on the field effect in SrTiO₃/LaAlO₃ heterostructures — •Martin Zwiebler¹, Enrico Schierle², Emiliano Di Gennaro³, Fabio Miletto Granozio³, and Jochen Geck^1,4 — ¹Leibniz Institute for Solid State and Materials Research IFW Dresden, Germany — ²Helmholtz-Zentrum Berlin für Materialien und Energie, Germany — ³CNR-SPIN and Dipartimento di Fisica Università "Federico II" di Napoli, Italy — ⁴Dresden University of Technology, Germany

The two-dimensional electron gas (2DEG), which can be realized at the SrTiO₃/LaAlO₃ interface, currently receives a lot of attention. Although both constituent materials are bulk insulators, the 2DEG at the interface exhibits a high carrier mobility and can even become superconducting. Numerous spectroscopic studies aimed at clarifying the electronic properties of the SrTiO₃/LaAlO₃ interface. However, the connection of those results to macroscopic quantities often remained controversial. In order to directly relate spectroscopic measurements to transport properties, we combined both techniques into a single experiment. More specifically, we measured the electrical resistivity as well as Ti L_2,3 x-ray absorption and resonant x-ray reflectivity of SrTiO₃/LaAlO₃ field effect devices, while monitoring the electrical resistivity. In this contribution we present first results of these efforts that reveal a strong impact of the soft x-ray radiation on the 2DEG. The implications for previously published studies are also discussed.