Berlin 2015 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)
HL 21.17: Poster
Montag, 16. März 2015, 15:00–20:00, Poster B
The Electronic Structure of amorphuos SnOx thin films and SnO2 single crystals — •J. Haeberle1, D. Gaspar2, P. Barquinha2, L. Pereira2, R. Martins2, E. Fortunato2, S. Machulik3, C. Janowitz3, R. Manzke3, and D. Schmeißer1 — 1Angewandte Physik/Sensorik, Brandenburgische TU Cottbus,K.-Wachsmann-Allee 17, 03046 Cottbus, Germany — 2Department of Materials Science Faculty of Sciences and Technology,New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica,2829-516 Caparica, Portugal — 3AG Elektronische Eigenschaften und Supraleitung, Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany
We compare the electronic properties of amorphous p-type SnOx thin film grown by rf magnetron sputtering with those of n-type SnO2 single crystals grown by cvt. We use resPES to study the electronic band structure. We measure the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From the resPES data recorded at the O1s and the Sn3d edges we derive the VB pDOS and the CB pDOS . The differences are most pronounced in the position of the VBM as for the a-SnOx films there appears a band closer to the Fermi energy. In addition for the SnOx we find in the XAS and pIY data a significant peak that appears right at the Fermi energy. This peak is absent in the single crystalline data. We attribute this to a change in the configuration of the Sn4d states to form a 4d8 configuration instead of 4d9 and 4d10 configurations which are identified in the single crystalline data.