Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.18: Poster

Monday, March 16, 2015, 15:00–20:00, Poster B

Preparation and Characterization of Nitrogen Doped ZnMgO:Al-Thin Films — •Hannes Giese, Philipp Schurig, Limei Chen, Thomas Sander, Angelika Polity, Detlev M. Hofmann, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität, Giessen, Deutschland

ZnO has a tunable band gap with good abilities for ultraviolet optoelectronic devices. The electrical properties, especially the band gap, of ZnO can be increased by adding MgO and doping with aluminum, for example. In order to yield homojunctions of ZnO, it is necessary to produce a stable and effective p-type doping of this system. A promising way to obtain this is to dope with nitrogen because of its atomic radius and its electrical properties being comparable with oxygen. In this work, thin films were produced by RF-sputter deposition with a ceramic target of Zn(0,72)Mg(0,25)O:Al(0,03). Nitrogen was used with argon as the sputtering gas at different growth temperatures (from room temperature to 700°C) and at constant temperatures with a different nitrogen flows (from 0,02-0,2 sccm). The films were characterized by UV/Vis spectroscopy, XRD and Hall-effect measurements. The results showed a dependence of the optical, structural and electrical properties on the varied parameters. This is accompanied with different colors of the thin films and different crystal structures. Zinc nitride formation was studied as a function of nitrogen partial pressure and growth temperature. It is assumed that only at very low nitrogen flows (0,02 sccm) the doping was successful, but the results indicate that p-type doping was not achieved.