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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.20: Poster

Montag, 16. März 2015, 15:00–20:00, Poster B

Impact of strain on electronic defects in (Mg,Zn)O thin films — •Florian Schmidt, Laurenz Thyen, Stefan Müller, Holger von Wenckstern, Gabriele Benndorf, Rainer Pickenhain, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig

Ternary MgZnO is an excellent material system for the fabrication of quantum well heterostructures and thus for potential application in exciton-related photonic devices.

We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS) and deep-level optical spectroscopy. The recombination line Y2, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain [1], was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3’ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples [2].

[1] M. Brandt et al., Phys. Rev. B 81, 073306 (2010).

[2] F. Schmidt et al., J. Appl. Phys. 116, 103703 (2014).