Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.22: Poster

Montag, 16. März 2015, 15:00–20:00, Poster B

Effects of functionalization of ZnO nanowire Schottky diodes on their current-voltage characteristics — •Emily T. Tansey¹, Alejandra Castro-Carranza¹, Stephanie Bley¹, Olesea Volciuc¹, Tobias Voss², and Jürgen Gutowski¹ — ¹Institute of Solid State Physics, Universität Bremen, Bremen, Germany — ²Institute of Semiconductor Technology, TU Braunschweig University of Technology, Braunschweig, Germany

Zinc oxide nanowires (ZnO NWs) have shown to be promising as nanoscale building blocks for optoelectronic applications due to their unique semiconductor, optical, piezoelectric, and chemical characteristics. An interesting approach to tailor the optoelectronic properties of ZnO NWs is to form hybrid junctions with other materials, e.g. polymers. It has been proposed that surface defects play a role in the tailor of the ZnO NWs properties. To gain further insight into this physical phenomenon, we explore the current-voltage characteristics of Schottky diodes formed by wet chemical-growth ZnO NW arrays and the p-type polymer Poly(3-hexylthiophene-2,5-diyl). Our results show that the thickness of the P3HT impacts the current transport mechanisms occurring at the junction.