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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.25: Poster

Montag, 16. März 2015, 15:00–20:00, Poster B

Field-effect transistors based on printed amorphous zinc-tin-oxide — •Benedikt Sykora, Andrea Gassmann, and Heinz von Seggern — Technische Universität Darmstadt Fachbereich Materialwissenschaften Fachgebiet Elektronische Materialeigenschaften Alarich-Weiss-Straße 2 64287 Darmstadt Germany Building L2|01 - Room 156 Tel.: +49 (0) 6151 16-6331 Fax: +49 (0) 6151 16-6305

Since the last two decades metal-oxides like ZnO are widely studied as semiconductors for transistor applications. The benefits of these materials are, that they can be processed out of solution, they are transparent and cost efficient. This contribution presents field-effect transistors based on a printed amorphous zinc-tin-oxide (ZTO) semiconductor. Thin films are analysed by XRD, TEM, SEM and absorption measurements. The used ethanol based precursor solution is cheap and easy to process, non-toxic and long term stable. The saturation mobility increases from 0.05 cm^2/Vs, if a single semiconducting layer is applied, to a value of 7.7 cm^2/Vs for a transistor composed of 8 layers. To the best of our knowledge this is the highest reported value for a printed ZTO transistor. The reason for this huge increase in electron mobility is presumable d an improved film coverage and increased density which could be confirmed by AFM and that is known from other oxide semiconductors (1). The devices also show large output currents, high on/off ratios and low subthreshold voltages.

(1) Walker et al. ACS Appl. Mater. Interfaces 4, 6835-6841 (2012)