Berlin 2015 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)
HL 21.27: Poster
Montag, 16. März 2015, 15:00–20:00, Poster B
Photon-assisted field emission from a Si tip with applied AC field (10 Hz-10 MHz) — Anna Zaporozhchenko1, Sergey Chernov2, Larisa Odnodvorets1, Boris Stetsenko3, •Sergej Nepijko2, Hans-Joachim Elmers2, and Gerd Schönhense2 — 1Sumy State University, Rimsky-Korsakov Str. 2, 40007 Sumy, Ukraine — 2Institute of Physics, University Mainz, Staudingerweg 7, 55128 Mainz, Germany — 3Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 46, 03028 Kiev, Ukraine
We investigated the field emission current from a p-type silicon tip with large resistivity of 4× 103 Ω·cm for illumination with a photon energy of 1.3 eV (close to the optical gap) and tip-anode voltages of (0.7÷5)× 103 V. Variations of the emission current due to an additional AC component of 30-60 V with varying frequency in the range of 10 to 107 Hz were observed. We investigated the dependence of this phenomenon on the AC frequency, light intensity and temperature. The resonant-like frequency dependence of the emission current is attributed to a dielectric resonance in the semiconducting tip material. The tip behaves like a driven plasmonic resonator. The results represent an important step forward for the development of high frequency display systems based on electron field emission.