Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)

HL 21.2: Poster

Monday, March 16, 2015, 15:00–20:00, Poster B

An X-ray photoelectron spectroscopy (XPS) study on intrinsic and nitrogen doped tin oxides — •Fabian Michel, Benedikt Kramm, Martin Becker, Jie Jang, Angelika Polity, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Gießen

This work is an XPS study on intrinsic and nitrogen doped tin oxide. We fabricated SnO_x thin films by ion beam sputtering and epitaxial growth. By sputtering we produced a series with varying stoichiometrie by changing the oxygen flow and/or the substrate temperature. Using the second method we made a series of SnO₂ with different nitrogen concentrations. By X-ray photoelectron spectroscopy (XPS) we identified the phases in the SnO_x thin films. Therefore, we took a look at the relative atomic concentration of tin and oxygen in the stoichiometrie series and especially at the relative atomic concentration of nitrogen in the samples produced by epitaxial growth. We also investigated the variation of the valence band position in relation to the treatments mentioned above. Thus we analyzed the chemical shifts of the photoelectron and the Auger electron lines. Furthermore the effects of the nitrogen doping on the valence band maximum and on the work function were investigated using ultraviolet photoelectron spectroscopy (UPS).