Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 21: Poster IB (Oxide semiconductors; II-VI and group IV semiconductors; Nanotubes and Buckyballs)
HL 21.9: Poster
Monday, March 16, 2015, 15:00–20:00, Poster B
Bipolar Oxide heterodiodes comprising In2O3 thin films — •Steffen Lanzinger, Daniel Splith, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany
Recently, the interest on In2O3 extends beyond application as transparent electrode and properties of semiconducting In2O3 thin films were reported. Different measurements revealed that In2O3 tends to form a surface electron accumulation layer, which makes the formation of rectifying contacts non-trivial. Recently, by using reactively sputtered Schottky contacts, highest rectification of about 3 orders of magnitude at room temperature was achieved, which is not sufficient for most applications (e.g. field-effect transistors). Therefore, the exploitation of pn-heterodiodes presents an additional, interesting approach towards higher rectification.
We investigated nominally undoped In2O3 thin films with a compensated In2O3:Mg surface layer with different thickness (0 nm, about 10 nm and about 100 nm). The thin films were deposited by pulsed-laser deposition at 600∘C and 0.016 mbar. On top, NiO and ZnCo2O4 were deposited at room temperature, forming pn-heterojunction diodes with the In2O3. Those diodes were investigated by current-voltage measurements (IV) at room temperature. Best rectifications of p-NiO/n-In2O3 and p-ZnCo2O4/n-In2O3 are with 4 orders of magnitude better than that of best Schottky barrier diodes on In2O3 thin films grown by molecular beam epitaxy. Further, temperature-dependent IV and the breakdown behavior of the diodes will be discussed.