Berlin 2015 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 23: Spintronics: Excitons and local spins (with MA/TT)

HL 23.8: Talk

Tuesday, March 17, 2015, 11:15–11:30, ER 270

Effect of electron spin inertia in II-VI semiconductors — •Fabian Heisterkamp¹, Evgeny A. Zhukov¹, Alex Greilich¹, Vladimir L. Korenev^1,2, Dmitri R. Yakovlev^1,2, Alexander Pawlis³, Grzegorz Karczewski⁴, Tomasz Wojtowicz⁴, Jacek Kossut⁴, and Manfred Bayer¹ — ¹Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany — ²Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia — ³Department Physik, Universität Paderborn, 33098 Paderborn, Germany — ⁴Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland

An electron bound to a fluorine donor impurity in ZnSe has been considered as a good candidate for a quantum bit [1]. We study the spin relaxation time (T₁) in fluorine-doped ZnSe epilayers using optical pump-probe spectroscopy. We fix the time-delay between pump and probe pulse and scan the magnetic field in Faraday geometry to measure the polarization recovery curve for different pump helicity modulation frequencies. While the spin polarization is able to reach its steady-state value for low modulation frequencies, the spins cannot be polarized completely, if the pump helicity changes too fast. We present a theoretical model for this effect of electron spin inertia. To test this approach we determine the spin relaxation time also for resident electrons in CdTe QWs. For further information on the optical properties of the samples we refer to Refs. [2] and [3]. [1] Sanaka et al., Phys. Rev. Lett. 103, 053601 (2009). [2] Greilich et al., Phys. Rev. B 85, 121303(R) (2012). [3] Zhukov et al., Phys. Rev. B 76, 205310 (2007).