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HL: Fachverband Halbleiterphysik
HL 24: Thermoelectricity
HL 24.7: Vortrag
Dienstag, 17. März 2015, 11:00–11:15, EW 202
Achieving optimum carrier concentrations in p-doped SnS thermoelectrics — •Sandip Bhattacharya1, Naga Harsha Gunda1, Robin Stern1, Gilles Dennler2, and Georg Madsen1 — 1ICAMS, Ruhr-Universität Bochum, Germany — 2IMRA Europe S.A.S, France
SnS is a commercially viable and environmentally friendly thermoelectric material. Recently [1] it was shown from an intermediate throughput investigation that p-doping in SnS can be achieved effectively with monovalent cations. This improves the itinerant carrier's concentration thereby enhancing its powerfactor. In particular, Ag-doped SnS under Sulphur rich environment showed encouraging transport properties. We shall elaborate upon our previous work and explore the possibility of p-doping SnS with Ag, Li, Cu, Na and K. We will discuss the effects of two ubiquitous effects that can result in decreasing the hole concentration. These undesired phenomena include the formation of coupled defects and oxidation of the dopant. This work serves as a comprehensive guide to achieve an efficient p-doped SnS thermoelectric material. [1] C. Bera, et al, Phys.Chem. Chem. Phys. 16, 19894 (2014).