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HL: Fachverband Halbleiterphysik

HL 27: Doped Si nanostructures (DS with HL/TT)

HL 27.2: Vortrag

Dienstag, 17. März 2015, 10:00–10:15, H 2032

Silicon nanocrystal thin films for solution-cast electronics — •Willi Aigner¹, Markus Wiesinger¹, Stanislav Abramov¹, Hartmut Wiggers², Rui N. Pereira^1,3, and Martin Stutzmann¹ — ¹Walter Schottky Institut and Physics Department, Technische Universität München, Garching, Germany — ²Institute for Combustion and Gasdynamics - Reactive Fluids, Universität Duisburg-Essen, Duisburg, Germany — ³Institute for Nanostructures, Nanomodelling and Nanofabrication, University of Aveiro, Aveiro, Portugal

In the last years, high-performance thin-film field-effect transistors (FETs) with an active layer of solution-processed semiconductor nanocrystals (NCs) films were demonstrated. However, few studies apply Si NCs, which are environmentally favorable and offer controlled n- and p-type doping. Recently, FETs using intrinsic Si NCs [1], as well as Si NC films doped with an electronic coupling agent [2] have been reported. In this work, we carried out a comprehensive study on the morphology and its influence on the electrical properties of Si NC thin films deposited by spray-coating. The effect of film thickness and NC size was investigated studying the electrical characteristics of FETs such as current-voltage behavior, hysteresis and ambipolar conduction under illumination. As we observe a strong dependence on morphology, we optimized our deposition parameters and achieved FETs with field-effect mobilities one order of magnitude higher than reported in the literature so far [1,2].

[1] Z. C. Holman, et al. Nano Lett. 10, 2661 (2010) [2] R. N. Pereira, et al. Nano Lett. 14, 3817 (2014)