Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 27: Doped Si nanostructures (DS with HL/TT)
HL 27.7: Hauptvortrag
Dienstag, 17. März 2015, 12:30–13:00, H 2032
Silicon Nanowire Devices and Applications — •Thomas Mikolajick1,2,3 and Walter Weber1,3 — 1NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden — 2Institut für Halbleiter und Mikrosystemtechnik, TU Dresden, 01062 Dresden — 3Center for Advancing Electronics Dresden (CfAED), TU Dresden, 01062 Dresden
Due to the quasi 1-dimensional nature of nanowires the controlability of elctrical fileds and currents are significantly enhanced. Therfore silicon nanowires are in development in the semiconductor industry as a very promision option for end of roadmap CMOS devices. Additionally new device concepts that are hard to realize in planar structures are enabled [1]. In this talk, first the fabrication of silicon nanowires and related device structures are explained. In the second part interesting transport properties that enable new device options will be shown. Based on these observations the most important nanowire device concepts will be deduced. The reconfigurable field effect transistor (RFET) will be explained as one interesting example that makes use of the specific advantage of the nanowire geometry. Finally an outlook to other applications of silicon nanowires like chemical sensing will be given.
[1] T. Mikolajick et al., Silicon nanowires - a versatile technology platform, Phys. Status Solidi RRL 7, No. 1, p. 793-799 (2013)