Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Photovoltaics: Nanostructured materials
HL 30.6: Vortrag
Dienstag, 17. März 2015, 11:30–11:45, ER 164
Maskless Inductively Coupled Plasma (ICP) Generated Black-Silicon as Alternative Technique to Wet Chemical Textures for Crystalline Silicon Solar Cells — •Jens Hirsch1,2, Maria Gaudig1, Marcus Gläser2, and Dominik Lausch1,2 — 1Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55 DE-06336 Köthen — 2Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeld-Str. 12, DE-06120 Halle
The current standard for the frontside texturing of crystalline silicon wafers for photovoltaic applications is the wet chemical etching. An alternative technique to this standard process is the maskless inductively coupled plasma (ICP) nanotexturing of the front surface. Plasma technology allows the specifically texturing of mono and multicrystalline silicon, hence parabolic like surface nano structures can be generated on multicrystalline silicon of every orientation too. In this contribution, the results of industrial standard wet and dry SF6/O2-ICP textures will be compared. In contrast to wet chemical textures, the optical properties of ICP-Nanotextures are based on the so-called Moth-Eye-Effect. This effect is the reason for the excellent optical properties of ICP-Textures under a normal and oblique angle of incidence. In particular, in this contribution the surface morphology, reflection and formation of dry ICP-Nanotextures will be investigated and compared to wet chemical standard textures. In this context, intense attention is given to the surface recombination velocity (SVR). Finally, a first attempt for simulating the influence on the reflection through the geometric of the surface structure will be given.