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HL: Fachverband Halbleiterphysik

HL 32: Graphene: Growth & intercalation (O with HL/TT)

HL 32.3: Vortrag

Dienstag, 17. März 2015, 11:00–11:15, MA 041

Comparing graphene growth on Cu(111) vs. oxidized Cu(111) — Stefano Gottardi¹, Kathrin Müller¹, Luca Bignardi¹, Juan Carlos Moreno Lopez¹, Tuan Anh Pham¹, Alexei Barinov², Jonas Björk³, Petra Rudolf¹, and •Meike Stöhr¹ — ¹University of Groningen — ²Sincrotrone Trieste — ³Linköping University

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes towards high quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface, in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide - a high-k dielectric material - preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.