Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Graphene: Growth & intercalation (O with HL/TT)
HL 32.7: Talk
Tuesday, March 17, 2015, 12:00–12:15, MA 041
Scanning Tunneling Microscopy of epitaxial Graphene with single ion-implanted Boron, Nitrogen and Carbon atoms — •Philip Willke1, Anna Sinterhauf1, Julian Amani2, Sangeeta Thakur3, Thomas Kotzott1, Steffen Weikert2, Kalobaran Maiti3, Hans Hofsäss2, and Martin Wenderoth1 — 1IV. Physikalisches Institut, Universität Göttingen, Germany — 2II. Physikalisches Institut, Universität Göttingen, Germany — 3Department of Condensed Matter Physics and Materials’ Science, TIFR, Mumbai, India
Using scanning tunneling microscopy and spectroscopy we investigate the structural and electronic properties of single substitutional atoms in SiC-graphene. These are prepared by low-energy ion implantation, which we use as a suitable method for boron and nitrogen incorporation in graphene [1,2]. We find, that boron and nitrogen atoms lead to an effective doping of the graphene sheet and allow to reduce or raise the position of the Fermi level, respectively. The electronic properties of the doping atoms are additionally addressed. To reveal the defect creation in the doping process 12C+ carbon ions, that only introduce defects and no impurity atoms, are studied as a reference. Moreover, we perform magnetotransport measurements to investigate the influence of the microscopic structure on the graphene transport properties. This work was supported by DFG priority program 1459 "Graphene".
[1] P. Willke et al., Appl. Phys. Lett. 105, 111605 (2014)
[2] U. Bangert et al., Nano Lett. 13(10) (2013)