Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: Nitrides: Dots, rods, and structures
HL 34.7: Vortrag
Dienstag, 17. März 2015, 12:45–13:00, EW 201
Direct correlation of structural properties and luminescence of an AlInN/AlGaN based microcavity structure — •Max Trippel, Gordon Schmidt, Peter Veit, Frank Bertram, Christoph Berger, Armin Dadgar, André Strittmatter, and Jürgen Christen — Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany
Using transmission electron microscopy combined with cathodoluminescence spectroscopy (STEM-CL) we present the spatially resolved optical properties of a microcavity structure (MC) on nanometer scale at 15 K.
The MC structure was grown by metal-organic vapor phase epitaxy (MOVPE) on a c-plane sapphire substrate with optimized AlGaN buffer. A lattice matched 45 pairs Al0.85In0.15N/Al0.17Ga0.83N distributed Bragg reflector (DBR) operates as the bottom mirror. The active medium consists of two InGaN/AlGaN multiple quantum well stacks (MQW), which are separated by a 50 nm thick AlGaN barrier.
STEM-CL images clearly resolve the complete stacking sequence of the MC structure. At 15 K the integrated STEM-CL spectrum is dominated by the MQW emission at about 360 nm. Highly spatially resolved STEM-CL linescans reveal a constant MQW peak position along growth direction indicating spectrally identical QWs. Both MQW stacks show distinct luminescence and can be resolved separately. The capture length of both MQWs was calculated to 15 nm.