Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: Posters II (Topological insulators; Graphene; Spintronics and spin physics; Quantum information science)
HL 39.3: Poster
Dienstag, 17. März 2015, 14:00–20:00, Poster F
Vapor phase deposition of bismuth selenide on hexagonal boron nitride — •Shaham Jafarpisheh1, Regine Ockelmann1, Kenji Watanabe2, Takashi Taniguchi2, Bernd Beschoten1, and Christoph Stampfer1,3 — 1JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany — 2National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan — 3Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
Three dimensional topological insulators (TIs) have shown unique electronic band structures making them promising materials for future spintronic devices. Topological insulators are materials with electrically insulating bulk while having gapless spin-polarized surface states with a linear dispersion relation which are topologically protected against backscattering resulting in a spin-polarized current on the surface of these materials. Among various materials predicted to show topological insulating properties, Bi2Se3 is in particular interesting because of its band structure and its relatively large bulk band gap of 0.3 eV which is much larger than the room temperature energy scale. In this study we report the vapor phase deposition of large area Bi2Se3 thin flakes on atomically flat surface of hexagonal boron nitride (hBN). Atomic force microscopy (AFM) and Raman spectroscopy were used to characterize the synthesized flakes. Finally, e-beam lithography and metallization is used to make electrical contacts on the as-grown Bi2Se3 flakes for further characterization by electron transport measurements.