Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 39: Posters II (Topological insulators; Graphene; Spintronics and spin physics; Quantum information science)
HL 39.33: Poster
Tuesday, March 17, 2015, 14:00–20:00, Poster F
Optical analysis of ultrapure GaAs:Si for spintronics — •Magnus Neumann1, Fabian Berski1, Andreas Wieck2, Jens Hübner1, and Michael Oestreich1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstr. 2, 30167 Hannover — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum
Isolated donor electron spins in GaAs are suitable candidates for performing quantum information processing. Their intrinsic spin dynamics can be probed by spin noise spectroscopy [1] which requires detailed knowledge of the donor bound exciton resonances and other related optical transitions in the spectral window of interest. Therefore we perform optical absorption measurements in the (D0X) regime on a free-standing layer of high quality MBE-grown GaAs with residual impurity density of n∼ 1014 cm−3.
Besides the well-known bound exciton transitions we quantify the pronounced peak-splitting of the free exciton resonance which is consistently explained within the exciton-polariton framework [2].
A quantative lineshape analysis confirms the high purity of our sample [3] and helps to monitor the (D0X) occupancy.
J. Hübner, F. Berski, R. Dahbashi, and M. Oestreich, physica status solidi (b) 251, 1824 (2014).
E.S. Koteles, J. Lee, J.P. Salerno, and M.O. Vassell, Phys. Rev. Lett. 55, 867 (1985).
W.L. Bloss, E.S. Koteles, E.M. Brody, B.J. Sowell, J.P. Salerno, and J.V. Gormley, Solid State Communications 54, 103 (1985).