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HL: Fachverband Halbleiterphysik

HL 4: Focus Session (with TT): Functional semiconductor nanowires I

HL 4.5: Vortrag

Montag, 16. März 2015, 10:45–11:00, EW 201

MOCVD Growth and Characterization of InGaN/GaN Nanowire-based core/shell Heterostructures — Bartosz Foltynski, Christoph Giesen, and •Michael Heuken — AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany

GaN based nanostructures have stimulated great interest in their applications for fabricating next-generation light emitting diodes (LEDs) for solid state lighting (SSL). Nanowires, benefiting from their geometry and offer a set of extraordinary properties like increase of light emission by utilizing the nanostructure side walls, limitation of negative effect of polarization fields and reduction of dislocation density. In our studies we present the optical and structural characterization of InGaN/GaN core/shell nanowires grown on Si(111) substrates by MOCVD. SEM,Photoluminescence and cathodoluminescence were used as characterization techniques. All growth experiments were performed in an AIXTRON CCS (Close Coupled Showerhead) reactor. The self-organized GaN nanowires were grown on Si(111) substrates using AlN buffer and in-situ SiNx masking layer. The growth conditions were optimized to achieve maximum density of vertical GaN microrods perpendicularly aligned to the substrate. Detailed results on growth optimization and structure characterization will be presented and discussed.