Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 4: Focus Session (with TT): Functional semiconductor nanowires I

HL 4.8: Talk

Monday, March 16, 2015, 12:00–12:15, EW 201

Influence of surface depletion on electrical conductivity of freestnding GaAs nanowires investigated by a multi-tip STM — •Weihong Zhao¹, Matthias Steidl¹, Stefan Korte², Hubertus Junker², Werner Prost³, Peter Kleinschmidt¹, and Thomas Hannapel¹ — ¹Photovoltaics Group, Institute for Physics, Technische Universität Ilmenau, D-98684 Ilmenau — ²Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, D-52425 — ³CeNIDE and Center for Semiconductor Technology and Optoelectronics, University of Duisburg-Essen, D-47057 Duisburg

P-type Zn-doped GaAs-Nanowires were prepared by the Au-assisted vapor-liquid-solid growth mode in a metal-organic vapor phase apparatus. Electrical investigation was carried out by a multi-tip scanning tunneling microscope as nano-prober on free-standing p-GaAs nanowires. As an approach to understand the doping process through the growing process, Zn-doped GaAs nanowires with different diameter were prepared. The electrical measurements and analysis on the nanowires deliver the key-information about process related dopant incorporation along the nanowires, which is responsible for the varying charge carrier depletion thickness.