Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: Focus Session (with TT): Functional semiconductor nanowires I
HL 4.9: Vortrag
Montag, 16. März 2015, 12:15–12:30, EW 201
Antimony doped ZnO nanowires — •Thomas Kure1, Alexander Franke1, Sarah Schlichting1, Emanuele Poliani1, Felix Nippert1, Markus R. Wagner1, Marcus Müller2, Peter Veit2, Sebastian Metzner2, Frank Bertram2, Eswaran S. Kumar3, Faezeh Mohammadbeigi3, Jürgen Christen2, Janina Maultzsch1, Simon Watkins3, and Axel Hoffmann1 — 1Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany — 2Otto-von-Guericke-University, Institut für Experimentalphysik, Germany — 3Simon Fraser University, Department of Physics, Burnaby, Canada
We investigated the morphology of metalorganic vapor phase epitaxy (MOVPE) grown c-axis aligned Sb doped ZnO NWs as well as the doping distribution and structural defects of single NWs. Cathodoluminescence spectroscopy (CL) along several single NWs reveal that the luminescence stems predominately from the tip and decreases towards the bottom of the NW. Raman measurements on ensemble NWs show additional vibrational modes, where some appear exclusively in Sb doped ZnO. Tip-enhanced Raman spectroscopy (TERS) was performed to investigate the local doping concentration. The significant increase of Sb-related Raman modes towards the apex confirms the increase of Sb along the NW.