Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: Devices
HL 42.3: Vortrag
Mittwoch, 18. März 2015, 10:00–10:15, EW 015
Resonant tunnelling structures to improve the erase time in memory devices based on quantum dots — •Ismail Firat Arikan1,2, Tobias Nowozin1, Dieter Bimberg1, and Nurten Oncan2 — 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany — 2Department of Physics, Faculty of Science, Istanbul University, 34134 Vezneciler, Istanbul, Turkey
We develop a memory device based on self-assembled quantum dots (QDs) called QD-Flash in order to combine the advantage of both DRAM and Flash Memory, i.e. non-volatility, fast write time (ns) and good endurance. While the write performance is promising, there is a trade-off for erasing performance: When the localization energy of the holes in the QDs is increased to further increase the storage time, the erase time also increases due to the increased tunnelling barrier. Implementing a superlattice structure, which allows resonant tunnelling as erasing mechanism, eliminates the trade-off between storage and erase time. In such a structure, it is possible to switch the transparency between very high and very low values by varying a bias voltage.
In this work, the concept of designing such a superlattice structure is presented. The structures are simulated using a One-Dimensional Poisson Solver and a Non-Equilibrium Green's Function Formalism. Results are presented.