Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 42: Devices

HL 42.5: Vortrag

Mittwoch, 18. März 2015, 10:45–11:00, EW 015

High-resolution in-situ electron beam lithography for deterministic nanophotonic device processing — •Manuel Gschrey, Ronny Schmidt, Arsenty Kaganskiy, Sven Rodt, and Stephan Reitzenstein — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin

Advances in the field of quantum communication and computation using single semiconductor quantum dots (QDs) as emitters of single and indistinguishable photons rely crucially on the development of novel deterministic device technologies. As such, in-situ electron-beam lithography combines the benefits of high-resolution electron-beam lithography (EBL) and deterministic fabrication of nanostructures via convenient preceding luminescence mapping by cathodoluminescence [1]. For the application of this technique, a thorough understanding of the alignment accuracy, the writing resolution and the low temperature resist properties is inevitable. In this work we address these important points by a statistical analysis of our in-situ lithography technology platform. We find the the alignment accuracy is well below 50 nm and that circular mesas and wires with feature sizes down to 100 nm can be realized routinely. Moreover, studying the dose and temperature dependence of various common resists has revealed that polymethylmethacrylate (PMMA) is most suitable for 2D and 3D EBL at cryogenic temperatures.

[1] M. Gschrey et. al, APL 102, 251113 (2013)

[2] M. Gschrey et. al, J. Vac. Sci. Technol. B 32, 061601 (2014)