Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: Devices
HL 42.6: Vortrag
Mittwoch, 18. März 2015, 11:00–11:15, EW 015
On the Photocurrent-Voltage Relations of Resonant Tunneling Photodetectors — •Andreas Pfenning1, Fabian Hartmann1, Fabian Langer1, Sven Höfling1,2, Martin Kamp1, and Lukas Worschech1 — 1Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany — 2SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, United Kingdom
We present a study of the photocurrent-voltage relations and photogenerated charge accumulation dynamics of resonant tunneling diode (RTD) photodetectors. The RTDs are based on an AlGaAs/GaAs double barrier structure with a nearby and lattice matched GaInNAs absorption layer. The RTDs were studied for light sensing at the telecommunication wavelength λ=1.3 μm by means of electro-optical transport measurements. A strong nonlinear photocurrent-voltage relation was found and is attributed to three voltage dependent parameters: the quantum efficiency η(V), the mean lifetime of photogenerated and accumulated charge carriers τ(V) and the RTD's current-voltage characteristic in the dark I(V).