Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 42: Devices

HL 42.7: Vortrag

Mittwoch, 18. März 2015, 11:15–11:30, EW 015

Ultraviolet photodiodes from visible-blind to solar-blind spectral range based on (Ga_1−x,In_x)₂O₃ thin films — •Zhipeng Zhang, Holger von Wenckstern, Stefan Müller, Daniel Splith, Jörg Lenzner, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstraße 5, 04103, Leipzig

We report on the fabrication of ultraviolet photodiode arrays based on Si-doped (Ga_1−x,In_x)₂O₃ thin films [1] having a monotonous lateral variation of the indium content x from 0 to 0.8 as determined by energy-dispersive X-ray diffraction spectroscopy. The wavelength-selectivity of the device from visible-blind to solar-blind spectral range is realized by using a continuous composition spread approach [2,3] for pulsed-laser deposition. We ablate a single but segmented target consisting of semicircular segments of In₂O₃ and Ga₂O₃ both containing 0.1 wt.% SiO₂ in addition.

The structural properties of the thin film are investigated by spatially resolved X-ray diffraction measurements revealing phase separation for x>0.2. The photoresponse of the photodiodes is determined from a metal-semiconductor-metal structure at room temperature. The onset of the absorption was tuned from 4.8 to 3.2 eV with increasing indium content within a single 2 inch wafer sample.

[1] H. von Wenckstern et al., Semic. Sci. Technol., accepted (2014)

[2] H. von Wenckstern et al., CrystEngComm. 15, 10020 (2013)

[3] Z. Zhang et al., IEEE J. Sel. Top. Quantum Electr. 20, 3801606 (2014)