Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: Devices
HL 42.8: Vortrag
Mittwoch, 18. März 2015, 11:30–11:45, EW 015
Stability of QD excited-state laser emission under simultaneous ground-state perturbation — •Yücel Kaptan1, André Röhm2, Bastian Herzog1, Benjamin Lingnau2, Holger Schmeckebier3, Dejan Arsenijević3, Vissarion Mikhelashvili4, Oliver Schöps1, Mirco Kolarczik1, Gadi Eisenstein4, Dieter Bimberg3, Ulrike Woggon1, Nina Owschimikow1, and Kathy Lüdge2 — 1Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin, Germany — 2Institut für Theoretische Physik, Technische Universität Berlin, Berlin, Germany — 3Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany — 4Technion Institute of Technology, Faculty of Electrical Engineering, Haifa, Israel
State of the art in optoelectronic devices based on In(Ga)As-quantum dots (QDs) is the primary use of the energetically lowest bound QD state, the ground state (GS). Using also excited states (ES) may provide additional functionalities. We investigate QD ES lasers and provide conclusions for the realization of multi-state QD devices. We study the impact of GS amplification on simultaneous ES lasing via time-resolved emission measurements and find that a depopulation of the QD GS is followed by a drop in ES lasing intensity, strongly depending on wavelength of the depletion pulse and injection current. Numerical simulations based on laser rate equations reproduce the experimental results by taking into account the different dynamics of lasing and non-lasing QD subensembles within the inhomogeneously broadened spectrum [1]. [1] Y. Kaptan et al., Appl. Phys. Lett. 105, 191105 (2014)