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09:30 |
HL 42.1 |
Charging dynamics of a floating gate transistor with site-controlled quantum dots — •Patrick Maier, Fabian Hartmann, Monika Emmerling, Christian Schneider, Sven Höfling, Martin Kamp, and Lukas Worschech
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09:45 |
HL 42.2 |
Charge transition levels of oxygen, lanthanum and fluorine related defect structures in bulk hafniumdioxide (HfO2): an ab initio investigation. — •Roman Leitsmann, Florian Lazarevic, Rolf Öttking, Ebrahim Nadimi, and Philipp Plänitz
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10:00 |
HL 42.3 |
Resonant tunnelling structures to improve the erase time in memory devices based on quantum dots — •Ismail Firat Arikan, Tobias Nowozin, Dieter Bimberg, and Nurten Oncan
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10:15 |
HL 42.4 |
Growth of In0.5Ga0.5As/GaP quantum dots, manipulation of optical transitions by epitaxial means, and application in nano memory cells — •Gernot Stracke, Elisa Sala, Leo Bonato, Manuel Gschrey, Sven Rodt, Sören Selve, Tore Niermann, Christopher Prohl, Andrea Lenz, Holger Eisele, Andrei Schliwa, André Strittmatter, and Dieter Bimberg
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10:30 |
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Coffee break
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10:45 |
HL 42.5 |
High-resolution in-situ electron beam lithography for deterministic nanophotonic device processing — •Manuel Gschrey, Ronny Schmidt, Arsenty Kaganskiy, Sven Rodt, and Stephan Reitzenstein
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11:00 |
HL 42.6 |
On the Photocurrent-Voltage Relations of Resonant Tunneling Photodetectors — •Andreas Pfenning, Fabian Hartmann, Fabian Langer, Sven Höfling, Martin Kamp, and Lukas Worschech
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11:15 |
HL 42.7 |
Ultraviolet photodiodes from visible-blind to solar-blind spectral range based on (Ga1−x,Inx)2O3 thin films — •Zhipeng Zhang, Holger von Wenckstern, Stefan Müller, Daniel Splith, Jörg Lenzner, Michael Lorenz, and Marius Grundmann
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11:30 |
HL 42.8 |
Stability of QD excited-state laser emission under simultaneous ground-state perturbation — •Yücel Kaptan, André Röhm, Bastian Herzog, Benjamin Lingnau, Holger Schmeckebier, Dejan Arsenijević, Vissarion Mikhelashvili, Oliver Schöps, Mirco Kolarczik, Gadi Eisenstein, Dieter Bimberg, Ulrike Woggon, Nina Owschimikow, and Kathy Lüdge
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11:45 |
HL 42.9 |
25 Gb/s phase modulation with 1.3 µm semiconductor optical amplifiers based on InAs quantum dots — •Anissa Zeghuzi, Holger Schmeckebier, Mirko Stubenrauch, Christian Meuer, Christian-Alexander Bunge, and Dieter Bimberg
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