Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 43: Ultra-fast phenomena

HL 43.1: Vortrag

Mittwoch, 18. März 2015, 09:30–09:45, EW 202

Bandgap behaviour of ultrashort laser pulse excited silicon — •Bernd Bauerhenne, Eeuwe S. Zijlstra, and Martin E. Garcia — Theoretische Physik - Universität Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

After an intensive ultrashort laser pulse excites silicon, it melts within the next 500 fs. Due to the drastic changes of the atomic positions, the band gap vanishes after ~120 fs and so molten silicon becomes metallic. We studied this effect ab inito with LDA DFT molecular dynamics simulations.