Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Quantum dots: Preparation and characterization
HL 44.1: Vortrag
Mittwoch, 18. März 2015, 09:30–09:45, EW 203
Recent advances in growth of high- density InP based InAs/InGaAlAs quantum dots with reduced size inhomogeneity — •Saddam Banyoudeh and Johann Peter Reithmaier — Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), University of Kassel
High-density 1.55 µm emitting quantum dot (QD) layers with a narrow spectral gain are requested for high-performance optoelectronic devices, like high-speed directly modulated communication lasers. We report about the influence of different growth parameters on the formation of 1.5 µm emitting InAs/InGaAlAs quantum dots (QDs) based on InP substrate. The InAs/InGaAlAs QDs were grown in a solid source molecular beam epitaxy system. The photoluminescence spectroscopy (PL) and atomic force microscope (AFM) were used to investigate the impact of the growth parameters, like V/III ratio, growth temperature of the InGaAlAs nucleation layer and growth rate of QD layers, on optical and structural properties of the formed QDs. The improved QD materials with dot densities up to 6 x 1010 cm−2 show a new record-low linewidth of 17 meV for a single QD layer and of 26 meV for multi QD layers, respectively (measurments performed at 10 K).