Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Quantum dots: Preparation and characterization
HL 44.11: Vortrag
Mittwoch, 18. März 2015, 12:15–12:30, EW 203
Direct growth of high-density InAs/GaAs core-shell quantum dots on silicon towards a new light emitting silicon based material platform — •Marc Sebastian Wolf and Johann Peter Reithmaier — Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel
Beyond the successful integration of III-V light emitting material on silicon by wafer-bonding or direct planar growth by using thick relaxation layers, no approach yet is fully process compatible with silicon fabrication technologies. To avoid III-V processing, a new hybrid material based on III-V quantum dots (QDs) embedded in a silicon matrix is under investigation (Benyoucef et al., pss a 211, 817 (2014)). A key parameter is the development of core-shell QDs directly grown on silicon surfaces, which could be already successfully demonstrated at low-density structures (Benyoucef et al., APL 102, 132101 (2013)). In this work, InAs/GaAs core/shell quantum dots are grown in a solid source molecular beam epitaxy system directly on the silicon substrate. For efficient light emitting devices (e.g. LED, Laser) we aim for high-density QD layers with light emission in the range of 1.3 µm. The influence of growth parameters, like growth temperature, V/III ratio, deposited material thickness, on structural and optical properties are investigated and characterized by low-temperature photoluminescence (PL) spectroscopy and atomic force microscopy. Dot densities of > 1010 cm−2 were obtained and first ensemble PL spectra will be discussed.