Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: Focus Session: Role of polarization fields in nitride devices II

HL 51.3: Invited Talk

Wednesday, March 18, 2015, 15:30–16:00, ER 164

Impact of reduced polarization fields on the optical properties of semipolar nitride quantum wells — •Mitsuru Funato and Yoichi Kawakami — Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan

Semipolar InGaN and AlGaN quantum wells (QWs) are promising material systems for efficient light emitters and detectors because of the reduced polarization fields. We have been investigating their crystal growth and optical properties, and have demonstrated that the radiative recombination lifetimes are drastically shortened in both the QWs. The shorted lifetimes have consequences; for example, (1) the carrier diffusion is limited, which leads to spatially uniform emission in the microscope level, (2) the AlGaN emission line width is reduced to below 100 meV, and (3) the emission intensity at room temperature is enhanced. In the presentation, we will describe the recent progress in the understanding of the optical properties of the semipolar QWs, with a particular focus on the effect of reduced electric fields.