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HL: Fachverband Halbleiterphysik

HL 51: Focus Session: Role of polarization fields in nitride devices II

HL 51.5: Vortrag

Mittwoch, 18. März 2015, 16:15–16:30, ER 164

Temperature-dependent Electro- and Photoluminescence on InGaN/GaN MQW LEDs — •Pascal Farin¹, Felix Nippert¹, Anna Nirschl², Alexander Wilm², Ines Pietzonka², Martin Strassburg², and Axel Hoffmann¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, Germany — ²OSRAM Opto Semiconductors GmbH, Regensburg, Germany

Current state-of-the-art multi quantum well light-emitting diodes (MQW LEDs) suffer from the droop phenomenon, a reduction in IQE at high operating currents. Several mechanisms including the Auger effect as well as saturation of the active region have been proposed to account for it. These have generally been investigated by means of electroluminescence (EL) and photoluminescence (PL). In order to distinguish between the different non-radiative recombination processes the influence of temperature and external electrical fields on the measurements is frequently utilized.

In this work temperature dependent results of EL and PL on InGaN/GaN MQW-LEDs are presented which allows a general comparison between the two measurements and offers insight into the loss mechanisms in these devices.