Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: Focus Session: Role of polarization fields in nitride devices II

HL 51.6: Vortrag

Mittwoch, 18. März 2015, 16:30–16:45, ER 164

Investigation of the optical characteristics of semipolar InGaN/GaN quantum wells on pyramidal facets — •Martina Dombrowski, Jan Wagner, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

The InGaN/GaN material system offers the possibility to reach the green spectral regime for semiconductor light emitters. However the development of such devices in an efficient way is still challenging. Strain introduced due to mismatching lattice constants in heterostructures creates a band tilt in the active region, leading to reduced recombination efficiency. One way to overcome this quantum confined Stark effect (QCSE) is to grow the quantum well on semipolar GaN facets. Since up to now semipolar and nonpolar GaN substrates are not widely available we grow pyramidal GaN structures by selected area growth (SAG). The semipolar facets of the pyramids are used as growth plane for InGaN quantum wells and show a reduced QCSE. To separate the influence of the electrical field and the influence of the three dimensional growth both semipolar and c-plane quantum wells were grown at the same spectral position. The optical and time-resolved photoluminescence measurements were performed and we compare the results for both type of samples.