HL 51: Focus Session: Role of polarization fields in nitride devices II
Mittwoch, 18. März 2015, 15:00–16:45, ER 164
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15:00 |
HL 51.1 |
Nitrogen vacancies in III-V nitrides as non-radiative recombination centers: a first-principles investigation — •Ying Cui, Christoph Freysoldt, and Jörg Neugebauer
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15:15 |
HL 51.2 |
Analysis of the anisotropic dielectric function of strained semipolar AlGaN — •Michael Winkler, Juliane Klamser, Martin Feneberg, Rüdiger Goldhahn, Joachim Stellmach, Martin Frentrup, Simon Ploch, Frank Mehnke, Tim Wernicke, and Michael Kneissl
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15:30 |
HL 51.3 |
Hauptvortrag:
Impact of reduced polarization fields on the optical properties of semipolar nitride quantum wells — •Mitsuru Funato and Yoichi Kawakami
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16:00 |
HL 51.4 |
Nonradiative recombination mechanisms in non- and semipolar GaInN/GaN quantum wells — •Manuela Klisch, Torsten Langer, Holger Jönen, Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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16:15 |
HL 51.5 |
Temperature-dependent Electro- and Photoluminescence on InGaN/GaN MQW LEDs — •Pascal Farin, Felix Nippert, Anna Nirschl, Alexander Wilm, Ines Pietzonka, Martin Strassburg, and Axel Hoffmann
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16:30 |
HL 51.6 |
Investigation of the optical characteristics of semipolar InGaN/GaN quantum wells on pyramidal facets — •Martina Dombrowski, Jan Wagner, Michael Jetter, and Peter Michler
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