Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 53: Photonic crystals

HL 53.2: Vortrag

Mittwoch, 18. März 2015, 15:15–15:30, EW 015

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography — •Olesea Volciuc¹, Tudor Braniste², Veaceslav Sergentu³, and Jürgen Gutowski¹ — ¹Institute of Solid State Physics, University of Bremen, Bremen 28334, Germany — ²National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004, Moldova — ³Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028, Moldova

We report on maskless fabrication of photonic crystal (PhC) circuits based on ultrathin (d ~ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with diameters of 150 nm. In recent years, we have proposed and developed a cost-effective technology for GaN micro- and nano-structuring, the so-called surface charge lithography (SCL), which opened wide possibilities for a controlled fabrication of GaN ultrathin membranes. SCL is a maskless approach based on direct writing of negative charges on the surface of a semiconductor by a focused ion beam (FIB). These charges shield the material against photo-electrochemical (PEC) etching. Ultrathin GaN membranes suspended on specially designed GaN microstructures have been fabricated using a technological route based on SCL with two selected doses of ion beam treatment.