Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 53: Photonic crystals
HL 53.3: Vortrag
Mittwoch, 18. März 2015, 15:30–15:45, EW 015
Fabrication of two dimensional photonic crystal membranes in cubic AlN/GaN — •Sarah Blumenthal1, Matthias Buerger1, Donat J. As1, Andre Hildebrandt2, and Jens Förstner2 — 1University of Paderborn, Faculty of Physics, Department of Optoelectronic Semiconductors — 2University of Paderborn, Faculty of Physics, Department of Theoretical Electrical Engineering
Group III-Nitrides attracted much attention in the development of optical and quantum optical devices, operating in the UV spectral range. Microresonators enable to control the spontaneous emission of light and to realize an efficient single photon emitter (SPE). Promising candidates for such devices are 2D photonic crystal (PhC) nanocavities. Recently, SPE of hexagonal GaN quantum dots (QD) were already reported. However, h-GaN QDs exhibit strong internal electrical fields causing long radiative lifetimes. This can be overcome by the growth of cubic GaN QDs where no polarisation fields are present. We implemented a process to fabricate freestanding c-AlN/GaN membrane with a 2D hexagonal array of holes. This configuration leads to a large photonic band gap. The free standing membrane ensures an inplane light propagation. This PhC cavity processing is realized by electron beam lithography and different steps of reactive ion etching. Simulations were carried out to optimize the size of the holes, the distance between the holes and the thickness of the membrane. Furthermore, various cavities were fabricated by omitting three holes in a row (L3-cavity) and five holes in a row (L5-cavity).