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Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 53: Photonic crystals

HL 53.4: Talk

Wednesday, March 18, 2015, 15:45–16:00, EW 015

GaAs-based photonic crystal microcavities with metallic contactsWadim Quiring1, •Björn Jonas1, Dirk Reuter1, Andreas D. Wieck2, and Artur Zrenner11Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Paderborn, Germany — 2Ruhr-Universität Bochum, Bochum, Germany

An elegant method to perform coherent control on a quantum dot two level system is to make use of an optical clock signal together with a synchronous electric HF-signal [1]. The application of this concept requires electrically contacted microcavities. To achieve this, we use MBE-grown membrans, which are designed as n-i-Schottky structures with an InGaAs quantum well as active layer in the intrinsic region. From this we have fabricated GaAs-based photonic crystal cavities with narrow electrodes, which provide an electric connection to the defect. Metalic contacts offer low sheet resistance and enable the transmission of high frequency signals, which are required for coherent optoelectronic manipulation. They also allow for electric tuning via the quantum confined Stark effect and for photocurrent (PC) readout. On those electrically contacted cavities we have performed PC spectroscopy under resonant excitation within a temperature range of 4 K - 310 K. We find strong cavity resonances in the PC spectrum and surprisingly high Q-factors up to 6000. Temperature increase results in an exponential enhancement of the PC and in an external quantum efficiency of 0.26 at room temperature. [1] S. Michaelis de Vasconcellos et. al, Nat. Photon., 4, 548 (2010)

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