Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 57: Optical properties of bulk semiconductors
HL 57.4: Talk
Wednesday, March 18, 2015, 17:00–17:15, EW 015
Determination of absolute Raman scattering cross sections in wz-GaN — •Christian Röder, Gert Irmer, Cameliu Himcinschi, and Jens Kortus — TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany
Reports on relative or absolute Raman scattering cross sections of phonons in wurtzite-type GaN are scarce in literature.
Loa et al. [1] report on measurements of absolute and relative Raman scattering efficiencies of phonons which are accessible in backscattering geometry.
In this work relative Raman scattering efficiencies of all Raman active phonon modes in wz-GaN were obtained using various scattering geometries [2].
Taking the dependence of the scattering cross sections on the phonon frequencies into acount the complete Raman tensors of wz-GaN were ascertained.
For the determination of the absolute scattering cross sections comparative measurements with standard substances such as cyclohexane (C6H12) and carbon tetrachloride (CCl4) were performed.
The authors would like to thank the European Union (EFRE) as well as the Free State of Saxony for financial support within the ADDE project.
[1] Loa, I. et al.: J. Raman Spectrosc. 29, 291 (1998)
[2] Irmer, G. et al.: J. Appl. Phys. accepted