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HL: Fachverband Halbleiterphysik

HL 57: Optical properties of bulk semiconductors

HL 57.5: Vortrag

Mittwoch, 18. März 2015, 17:15–17:30, EW 015

First-Principles calculations of the single-particle properties for novel Bismide and Nitride containing III-V semiconductors — •Phil Rosenow¹, Phillip Springer¹, Stephan W. Koch², and Ralf Tonner³ — ¹Research Training Group GRK 1782, Philipps-Universität Marburg, 35032 Marburg, Germany — ²Department of Physics, Philipps-Universität Marburg, 35032 Marburg, Germany — ³Department of Chemistry, Philipps-Universität Marburg, 35032 Marburg, Germany

Novel, Bi and/or N containing GaAs based semiconductor systems have great potential for optoelectronic applications ranging from lasers, LEDs, solar cells, all the way to detectors.(1) For the systematic microscopic modelling of such devices, it is a prerequisite to have reliable information on the electronic bandstructure and the single-particle wavefunctions of the respective materials. Here, we use DFT with the MBJLDA functional. Using the resulting bandstructure, we used a least-squares fitting procedure to extract k· p parameters.(2) Since the extracted k· p parameters incorporate the effects of other bands, they are effective parameters allowing to treat systems that have not been experimentally characterized in any way since all parameters can be obtained computationally. Effects of disorder in mixed systems can be treated as well by averaging over various congigurations.
(1) N. Koukourakis et al., Appl. Phys. Lett. 2012, 100, 092107-092103. (2) R. Oszwaldowski, M. Reichelt, T. Meier, S. W. Koch, M. Rohlfing, Phys. Rev. B 2005, 71.