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HL: Fachverband Halbleiterphysik
HL 58: OFETs, OLEDs, and organic optoelectronics
HL 58.7: Vortrag
Mittwoch, 18. März 2015, 18:00–18:15, EW 202
Permeable Base Transistor - an Organic Thin-Film Transistor with High On/off Ratio and HF-operation — •Markus Klinger1, Axel Fischer1, Felix Kaschura1,2, Bahman Kheradmand-Boroujeni2,3, Daniel Kasemann1, and Karl Leo1 — 1IAPP, TU Dresden, George-Bähr-Str. 1, 01069 Dresden — 2cfAED, Flügelweg 20, 01157 Dresden — 3CCN, TU Dresden, Helmholtzstraße 18, 01069 Dresden
Optimization of Organic Field-Effect Transistors (OFET) typically involves expensive structuring techniques in order to achieve small channel lengths in the micrometer range. Here, we show a Permeable Base Transistor (PBT), fabricated using thermal vapor deposition and shadow masks. These PBTs consist of a ’sandwich’-geometry with three parallel electrodes separated by two semiconducting C60 layers. The current flow between the upper and lower electrode is controlled by a thin perforated electrode in the middle [1]. Since electron transport is directed vertically, channel lengths in the range of 100 nm are achieved. By using insulating layers, we realize downscaled transistors with an active area of (0,2 mm)2. The PBTs reach a current density of 10 A/cm2, an on/off ratio greater than 106 and a gain of 1000 at a low driving voltage of 1.0 V. The transit frequency of 2.2 MHz is determined with an optimized measuring setup [2]. In comparison to agressively scaled horizontal OFETs [3], we present a device configuration realized at low cost, allowing for applications with high current and switching speed. [1] J. Appl. Phys., 111(4), 044507; [2] IEEE Transactions on Electron Devices, 61(5), 1423-1430; [3] Small, 8(1), 73-79