Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 61: Posters III (Organic-inorganic perovskite semiconductors; Organic photovoltaics and electronics; Photovoltaics; Energy science; New materials and concepts)

HL 61.35: Poster

Wednesday, March 18, 2015, 15:00–20:00, Poster F

Time-resolved Photoluminescence in thin film semiconductors - experiment and simulation — Matthias Maiberg, Conrad Spindler, Torsten Hölscher, Enrico Jarzembowski, Stefan Hartnauer, and •Roland Scheer — Martin-Luther-University Halle-Wittenberg, Photovoltaics Group, Von-Danckelmann-Platz 3, 06120 Halle, Germany

Time-resolved photoluminescence (TRPL) often is used to measure the effective lifetime of minority carriers in a semiconductor. However, there are several reasons for the TRPL decay not equal the decay of the minority carrier density: Bimolecular recombination, charge carrier drift and diffusion, shallow defects in the band gap, and varying defect densities.

By computer simulation we can explain most of the experimental findings. A curved decay for excitation with high injection levels can be assigned to bimolecular recombination. Contrary, a curved decay for low injection levels can be related to minority carrier capture and reemission from shallow defects in the band gap as well as to defect densities that vary on the lateral scale.

In bias voltage dependent TRPL on pn junctions (solar cells), the decay time increases with increasing voltage. This can be explained by a reduction of charge carrier drift in the space charge region and may be used to determine the charge carrier mobility.