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HL: Fachverband Halbleiterphysik

HL 61: Posters III (Organic-inorganic perovskite semiconductors; Organic photovoltaics and electronics; Photovoltaics; Energy science; New materials and concepts)

HL 61.40: Poster

Mittwoch, 18. März 2015, 15:00–20:00, Poster F

In situ Raman investigation of silicene — •Dmytro Solonenko¹, Patrick Vogt², Ovidiu D. Gordan¹, and Dietrich R. T. Zahn¹ — ¹Halbleiterphysik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany — ²Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany

Silicene, the silicon counterpart of graphene, possesses unique electronic and structural properties. Its inherent buckling leads to an opening of the bandgap and presence of polarized spin-states under an external electric field[1]. Moreover, its implementation into Si-based technology is considered to be less challenging than in the case of graphene. Silicene does not exist in nature and can be obtained only by synthesis on a supporting substrate. Only recently silicene could be synthesized on Ag(111) and characterized in terms of its structural and electronic properties[2]. However, some questions regarding the structural aspects and the interaction with the Ag substrate remain. Raman spectroscopy was employed to answer some of the open questions. Here, we report in situ Raman measurements of mono- and multilayer silicene obtained for a broad range of excitation wavelengths. Silicene layers were grown under UHV-conditions on a Ag (111) substrate and the formation of different silicene phases was verified by LEED. The temperature and chemical stability of silicene was tested by in situ temperature-dependent measurements and ex situ oxidation.

1. N.D. Drummond et al., Physical Review B 85, (2012).

2. P. Vogt et al., Physical Review Letters 108, (2012).