Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 61: Posters III (Organic-inorganic perovskite semiconductors; Organic photovoltaics and electronics; Photovoltaics; Energy science; New materials and concepts)

HL 61.41: Poster

Wednesday, March 18, 2015, 15:00–20:00, Poster F

Coulomb oscillations in improved metal nanoparticle field-effect transistors — •Svenja Willing, Mirjam Volkmann, Sandra Möller, Hauke Lehmann, and Christian Klinke — Institut für Physikalische Chemie, Universität Hamburg, Grindelallee 117, 20146 Hamburg, Germany

Following the current down-scaling trend in electronic device
fabrication, transistors based on nanoparticles represent a great possibility for further miniaturization. The small self-capacitance of the individual metal nanoparticles results in a Coulomb energy gap [1]
that is influenced not only by the particles’ size and interparticle distance but also by electrical fields. The transport through arrays of metal nanoparticles separated by tunnel barriers can thus be tuned through the application of a gate voltage in the manner of a conventional semiconductor field-effect transistor.

We synthesize monodisperse CoPt nanoparticles by colloidal
chemistry [2] and deposit them onto silicon substrates as highly-ordered monolayers via the scalable Langmuir-Blodgett method. Using standard lithography steps, we implement different gate
geometries and define the shape of the nanoparticle array to improve the gate-voltage influence in the resulting metal nanoparticle based transistor. Electrical transport measurements show a broad Coulomb blockade regime and Coulomb oscillations in the output and transfer characteristics respectively. We find that the oscillations can be measured at temperatures of up to approximately 100 K.

[1] Phys. Rev. B 44, 1646 (1991)   [2] Nano Lett. 10, 964 (2010)