Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 63: Group IV elements and compounds
HL 63.6: Vortrag
Donnerstag, 19. März 2015, 10:45–11:00, EW 015
Structural and electrical properties of sulfur doped Si by ion implantation — •Fang Liu1,2, Slawomir Prucnal1, Kun Gao1,2, Muhammad Khalid1, Wolfgang Skorupa1, Manfred Helm1,2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany — 2Technische Universität Dresden, Dresden, Germany
Hydoping Si with chalcogens is one of the effective approaches to form an intermediate band (IB). This IB material is a candidate of infrared photodetectors and intermediate band solar cells. However, the chalcogens have relatively low solid solubility limit in Si. We prepared sulfur doped silicon to above the Mott insulator concentration by ion implantation followed by pulsed laser annealing. The degree of crystalline lattice recovery in implanted layers and the lattice location of sulfur in Si were analyzed by Rutherford backscattering spectrometry / Channeling. Our results show that S atoms are occupying substitutional lattice sites in Si. We also observe an insulator-to-metal transition in silicon hyperdoped with sulfur to concentrations well above the maximum solubility limit of about 3*1016 cm-3. Analyzing temperature-dependent conductivity data, we find that a transition from insulating to metallic conduction occurs at a peak sulfur concentration of around 1*1021 cm-3.