Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 65: Focus Session (DS with HL): Oxide semiconductors I

HL 65.4: Talk

Thursday, March 19, 2015, 10:30–10:45, H 2032

Schottky contacts and pn-heterojunctions on heteroepitaxial In₂O₃ thin films grown by pulsed laser deposition — •Daniel Splith, Florian Schmidt, Steffen Lanzinger, Stefan Müller, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany

Oxide semiconductors like In₂O₃ are promising materials for a new generation of transparent electronic devices. While the properties of highly tin-doped In₂O₃ (ITO) for use as a transparent conductive oxide (TCO) are well investigated, interest in the semiconducting properties of In₂O₃ for the investigation of material properties and application in devices arose recently. In order to create devices like diodes or field-effect transistors, the creation of a space charge region is required, which can be done either by a Schottky contact (SC) or a pn-junction.

In this contribution we discuss the fabrication of rectifying contacts based on SCs [1] and pn-heterojunctions with an amorphous p-type oxide like NiO or ZnCo₂O₄ [2]. To optimize the performance of the rectifying contacts different approaches were used: By introducing a Mg-doped In₂O₃ layer, the reverse current was decreased by several orders of magnitude since Mg acts as an acceptor in In₂O₃ and therefore increases the width of the space charge region. Also, a tin doped back contact layer was employed in order to decrease the series resistance of the contacts. Further, different substrates were used to investigate the influence of the crystal quality on the rectifying properties.
H. von Wenckstern et al., APL Mat. 2, 046104 (2014)
F.-L. Schein et al., Appl. Phys. Lett. 104, 022104 (2014)